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AO4622 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4622 is Pb-free (meets ROHS & Sony 259 specifications).
Features
n-channel VDS (V) = 20V ID = 7.3A (VGS=4.5V) RDS(ON) < 23m (VGS=10V) < 30m (VGS=4.5V) < 84m (VGS=2.5V) p-channel -20V -5A (VGS=-4.5V) RDS(ON) < 53m (VGS = -4.5V) < 87m (VGS = -2.5V)
D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 G2 S1
D2
SOIC-8
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage 16 Continuous Drain AF Current Pulsed Drain Current Power Dissipation B Avalanche Current
B
Max p-channel -20 12 -5 -4.2 -25 2 1.44 13 25 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C
B
7.3 ID IDM PD IAR EAR TJ, TSTG 6.2 35 2 1.44 13 25 -55 to 150
W A mJ C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 48 74 35 48 74 35
Max 62.5 110 40
Units C/W C/W C/W
62.5 C/W 110 C/W 40 C/W
Alpha & Omega Semiconductor, Ltd.
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AO4622
N-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=16V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=6.4A VGS=2.5V, ID=4.5A gFS VSD IS Forward Transconductance VDS=5V, ID=7.3A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 0.6 35 19 28 24 67 17 0.7 1 3 900 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 162 105 1.8 15 VGS=10V, VDS=10V, ID=6.5A 7.2 1.8 2.8 4.5 VGS=10V, VDS=10V, RL=1.4, RGEN=3 IF=7.3A, dI/dt=100A/s 9.2 18.7 3.3 18 9.5 2.7 18 9 1100 23 33.6 30 84 1.25 Min 20 1 5 100 2 Typ Max Units V uA nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. R JL and RJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1:Nov. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4622
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V 6V 4.5V 25 20 ID(A) 15 10 VGS=3V 5 30 VDS=5V 25C -40C 125C
50 40
ID (A) 3.5V
30 20 10 0 0 1 2 3 4 5
1.4 494 692 593 830
0 1 3 4 VGS(Volts) Figure 2: Transfer Characteristics 2 5
VDS (Volts) Figure 1: On-Region Characteristics 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 10 0 0 5 10 15 VGS=10V 20 25 30 VGS=4.5V VGS=2.5V Normalized On-Resistance
1.60
193 18
VGS=10V, 7.3A 1.40 VGS=4.5V, 6.4A
1.20
1.00
VGS=2.5V, 5.5A
0.80
0.60 -50 -25 0 25 50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
59 75 142
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
40 35 30 RDS(ON) (m) 25 20 25C 15 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C ID=7.3A
1.E+02 1.E+01 1.E+00 IS (A) 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 0.0 0.2 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.4 1.2 25C 125C -40C
Alpha & Omega Semiconductor, Ltd.
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AO4622
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 1400 VDS=10V ID=7.3A 1200 Capacitance (pF) 1000 800 600 400 200 0 0 3 6 Qg (nC) 9 12 Figure 7: Gate-Charge Characteristics 15 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 Crss Coss Ciss
8
VGS (Volts)
6
1.4 494 692 593 830
4
2
0
100.0 10s 10.0 ID (Amps) 1ms 100s Power (W)
50 40 30 20 10 0 0.0001
193 18
10ms 1.0 RDS(ON) limited 1s 10s TJ(Max)=150C TA=25C 0.1 1 0.1s DC
TJ(Max)=150C TA=25C
0.1
0.0 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.001
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4622
P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-2.5V, ID=-4.2A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.3 -25 44 59 67 13 -0.76 -1 -2.5 800 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 131 103 6.7 15.5 VGS=-4.5V, VDS=-10V, ID=-4.5A 7.4 1.3 2.9 4.4 VGS=-4.5V, VDS=-10V, RL=2, RGEN=3 IF=-5A, dI/dt=100A/s 7.6 44 13.5 20 9 10 960 53 71 87 -0.9 Min -20 -1 -5 100 -0.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
2 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The JA A value in any any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal given application depends on the user's specific board design. The value in B: Repetitive rating, resistance rating. pulse width limited by junction temperature. C. The R JA rating, pulse width limited by junction temperature. B: Repetitiveis the sum of the thermal impedence from junction to lead R JL and lead to ambient. R JL and RJC are equivalent terms referring to thermal resistance from junction to drain lead. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA A curve provides a single pulse rating. SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: Nov. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 80 70 VGS=-2.5V RDS(ON) (m) 60 50 40 30 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 ID=-5A 1.0E+02 1.0E+01 1.0E+00 60 RDS(ON) (m) 125C -IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 125C VGS=-4.5V Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-2.5V -3.5V -4.5V -6V -ID(A) VGS=-2.5V 10 25C 5 125C 0 0.5 1.0 1.5 2.0 2.5 3.0 -VGS(Volts) Figure 2: Transfer Characteristics -40C 15 VDS=-5V 20
-ID (A)
ID=-5A
VGS=-4.5V ID=-4.2A
40
Alpha & Omega Semiconductor, Ltd.
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AO4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-5A 1250 1000 Capacitance (pF) 750 500 250 0 0 Crss 5 10 15 20 Coss
Ciss
-VDS (Volts) Figure 8: Capacitance Characteristics
100 10s 10 ID (Amps) 1ms 100 RDS(ON) limited 10s 0 TJ(Max)=150C TA=25C 0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10ms 0.1s DC 1s Power (W)
60 50 40 30 20 10 0 0.0001 0.001
TJ(Max)=150C TA=25C
1
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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